DocumentCode
2669988
Title
Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas
Author
Gaspare, A. Di ; Casini, R. ; Ortolani, M. ; Giovine, E. ; Foglietti, V. ; Romanini, P. ; Dominijanni, D. ; Peroni, M. ; Evangelisti, F.
Author_Institution
Inst. for Photonics & Nanotechnol., CNR, Rome, Italy
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared.
Keywords
Schottky diodes; field effect transistors; rectifiers; air-bridge Schottky diodes; integrated antennas; on-chip lithographic antennas; pseudomorphic heterostructure field-effect transistors; quasi-optical terahertz rectifiers; rectified signal; silicon lens; Detectors; Frequency measurement; HEMTs; Logic gates; MODFETs; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104767
Filename
6104767
Link To Document