Dependency of Heterojunction Transistors´ speed on various physical parameters: A comparative study of SiGe & AlGaAs HBTs

Author

Biswas, Priyanka ; Mannan, Rowshon Ara ; Jahan, Nusrat ; Arafat, Yeasir

Author_Institution

Dept. of Electr., Electron & Commun. Eng., Dhaka, Bangladesh

fYear

2014

fDate

10-12 April 2014

Firstpage

1

Lastpage

6

Abstract

It is very essential to find out how the speed of a Heterojunction Bipolar Transistor (HBT) depends on different physical parameters of the transistor as the device has become indispensable in modern ultrafast circuits. As the speed of an HBT is a very strong function of its base transit time, here we investigate its dependency on minority carrier injection, base width, base emitter voltage, peak base doping concentration and slope of base doping for an AlGaAs HBT. The analytical model of base transit time of this AlGaAs HBT is based on SIGe model as found in literature. Comparison of base transit time obtained from similar simulation for SIGe and AlGaAs HBT has been presented in this work.

Keywords

Ge-Si alloys; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; minority carriers; semiconductor doping; AlGaAs; HBT speed; SiGe; base doping slope; base emitter voltage; base transit time; base width; heterojunction bipolar transistor speed dependency; minority carrier injection; peak base doping concentration; physical parameters; ultrafast circuits; Current density; Doping; Electric fields; Equations; Heterojunction bipolar transistors; Junctions; Mathematical model; Comparison of base transit time; Gaussian doping profile; HBT; Minority carrier injection;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering and Information & Communication Technology (ICEEICT), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4820-8

Type

conf

DOI

10.1109/ICEEICT.2014.6919123

Filename

6919123