DocumentCode
2670189
Title
Single-event effects on ultra-low power CMOS circuits
Author
Casey, Megan C. ; Bhuva, Bharat L. ; Nation, Sarah A. ; Amusan, Oluwole A. ; Loveless, T. Daniel ; Massengill, Lloyd W. ; McMorrow, Dale ; Melinger, Joseph S.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fYear
2009
fDate
26-30 April 2009
Firstpage
194
Lastpage
198
Abstract
Operating circuits in the subthreshold region is a simple method to lower total power consumption. The lower supply voltages decrease the electric fields present in the devices (resulting in lower charge collection), but increase the time required to remove the charge. These two competing mechanisms are characterized through two-photon absorption experiments for single-events to show that single-event vulnerability does not show a linear relationship with power supply voltage, as would be expected, in the subthreshold region. Single-event characterization is carried out using higher harmonic oscillation in ring oscillators with large numbers of stages over a wide range of supply voltages.
Keywords
CMOS integrated circuits; harmonic oscillators (circuits); low-power electronics; power consumption; power integrated circuits; electric fields; harmonic oscillation; linear relationship; power consumption; power integrated circuits; power supply voltage; ring oscillators; single-event effects; subthreshold region; two-photon absorption experiments; ultra-low power CMOS circuits; Absorption; CMOS technology; Circuits; Energy consumption; Frequency; Laboratories; Power supplies; Radiation hardening; Semiconductor device reliability; Voltage; combinational logic; single-event effects; soft error rate; subthreshold; ultra-low power CMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173250
Filename
5173250
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