• DocumentCode
    2670189
  • Title

    Single-event effects on ultra-low power CMOS circuits

  • Author

    Casey, Megan C. ; Bhuva, Bharat L. ; Nation, Sarah A. ; Amusan, Oluwole A. ; Loveless, T. Daniel ; Massengill, Lloyd W. ; McMorrow, Dale ; Melinger, Joseph S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    194
  • Lastpage
    198
  • Abstract
    Operating circuits in the subthreshold region is a simple method to lower total power consumption. The lower supply voltages decrease the electric fields present in the devices (resulting in lower charge collection), but increase the time required to remove the charge. These two competing mechanisms are characterized through two-photon absorption experiments for single-events to show that single-event vulnerability does not show a linear relationship with power supply voltage, as would be expected, in the subthreshold region. Single-event characterization is carried out using higher harmonic oscillation in ring oscillators with large numbers of stages over a wide range of supply voltages.
  • Keywords
    CMOS integrated circuits; harmonic oscillators (circuits); low-power electronics; power consumption; power integrated circuits; electric fields; harmonic oscillation; linear relationship; power consumption; power integrated circuits; power supply voltage; ring oscillators; single-event effects; subthreshold region; two-photon absorption experiments; ultra-low power CMOS circuits; Absorption; CMOS technology; Circuits; Energy consumption; Frequency; Laboratories; Power supplies; Radiation hardening; Semiconductor device reliability; Voltage; combinational logic; single-event effects; soft error rate; subthreshold; ultra-low power CMOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173250
  • Filename
    5173250