Temperature dependent THz time-domain spectroscopy of carrier dynamics in GaN thin film

Author

Balci, Soner ; Baughman, William ; Wilbert, David S. ; Butler, Lee ; Kung, Patrick ; Kim, Seongsin M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Alabama, Tuscaloosa, AL, USA

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

We report the complex refractive index, conductivity, and dielectric constants of GaN thin film in the terahertz frequency as a function of temperature using terahertz time-domain spectroscopy. Temperature dependent carrier dynamics and optical properties are observed in the frequency range from 0.3 to 2.0 THz. Temperature dependent complex conductivity is fitted by a Drude model to find changes in relaxation times and plasma frequencies.

Keywords

III-V semiconductors; electrical conductivity; gallium compounds; permittivity; refractive index; semiconductor thin films; terahertz wave spectra; Drude model; GaN; GaN thin film; carrier dynamics; complex refractive index; conductivity; dielectric constants; frequency 0.3 THz to 2.0 THz; optical properties; plasma frequencies; relaxation times; temperature dependent carrier dynamics; temperature dependent complex conductivity; temperature dependent thz time-domain spectroscopy; Conductivity; Gallium nitride; Plasma temperature; Refractive index; Temperature; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6104785

Filename

6104785