Title :
Terahertz time domain spectroscopy of vertical silicon nanowires
Author :
Lim, M. ; Choi, S.-J. ; Moon, K. ; Jung, E. ; Seol, M.-L. ; Do, Y. ; Choi, Y.-K. ; Park, I. ; Han, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The complex dielectric constants of vertically aligned silicon nanowires (SiNWs) are measured by using terahertz time domain spectroscopy (THz-TDS). The SiNWs are fabricated on a (100) silicon wafer by a metal-assisted chemical etching method. It is demonstrated that the absorption coefficient of the SiNWs is significantly larger than that of a bare silicon wafer at THz band.
Keywords :
elemental semiconductors; etching; nanowires; permittivity; silicon; spectroscopy; Si; absorption coefficient; dielectric constants; metal-assisted chemical etching method; terahertz time domain spectroscopy; vertically aligned nanowires; Antenna measurements; Dielectric measurements; Frequency measurement; Nanowires; Silicon; Stimulated emission; Substrates;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104786
