Title :
An amorphous Si TFT array with TaOx/SiNx double layered insulator for liquid crystal displays
Author :
Takeda, Etsuya ; Kawaguchi, Tatsuki ; Nanno, Yutaka ; Tsutsu, Noriko ; Tamura, Tatsuhiko ; Ishihara, Shin-ichiro ; Nagata, Seiichi
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
An experimental a-Si thin-film transistor (TFT) for liquid-crystal-display applications, with a double layer of reactively sputtered TaO/sub x/ and plasma CVD SiN/sub x/ insulator, is described. In comparison to TFT with SiN/sub x/ (400-nm) single-layered insulator, TFT with TaO/sub x/ (200-nm)/SiN/sub x/ (200-nm) insulator showed mobility increased by 30%, on-current twice as large, and off-current reduced to one half. The sizes of a TFT and a storage capacitor may be reduced by using the double layer with an effective dielectric constant of about 10. TaO/sub x/ layer acts as a projection layer for ITO pixel electrodes during fabrication process. Experimental TFT arrays showed larger operating margin and superior stability.<>
Keywords :
CVD coatings; MOS integrated circuits; amorphous semiconductors; elemental semiconductors; insulating thin films; liquid crystal displays; silicon; silicon compounds; sputtered coatings; tantalum compounds; thin film transistors; TaO/sub x/-SiN/sub x/; amorphous Si thin films transistor; double layered insulator; liquid crystal displays; plasma CVD SiN/sub x/; reactively sputtered TaO/sub x/; Amorphous materials; Capacitors; Dielectric constant; Dielectrics and electrical insulation; Electrodes; Fabrication; Indium tin oxide; Plasma applications; Silicon compounds; Thin film transistors;
Conference_Titel :
Display Research Conference, 1988., Conference Record of the 1988 International
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/DISPL.1988.11298
