• DocumentCode
    2670479
  • Title

    Reliability of single and dual Layer Pt nanocrystal devices for NAND flash applications: A 2-region model for endurance defect generation

  • Author

    Singh, Pawan K. ; Bisht, Gaurav ; Sivatheja, M. ; Sandhya, C. ; Mukhopadhyay, Gautam ; Mahapatra, Souvik ; Hofmann, Ralf ; Singh, Karam ; Krishna, Nety

  • Author_Institution
    Indian Inst. of Technol. Bombay, Mumbai, India
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    301
  • Lastpage
    306
  • Abstract
    Nanocrystal (NC) based memory devices are considered a possible alternative for floating gate (FG) replacement below 30 nm node. In this work, endurance reliability of Pt NC devices is investigated for single layer (SL) and dual layer (DL) structures. The degradation in the devices due to Program/Erase (P/E) stress is investigated. Relative improvement in reliability of DL structure over SL structure is shown. A physical model for defect generation in the gate stack is proposed which is able to explain endurance and post-cycling characteristics. Dual layer structure is shown to have better inherent reliability over single layer structure.
  • Keywords
    NAND circuits; flash memories; integrated circuit reliability; logic gates; nanostructured materials; platinum; NAND flash applications; NC device endurance defect generation; NC device endurance reliability; Pt; defect generation physical model; dual layer structure analysis; floating gate replacement; gate stack defect generation; nanocrystal based memory device; postcycling characteristics; program-erase stress; single layer structure study; size 30 nm; Aluminum oxide; Character generation; Dielectric devices; Dielectric materials; Dielectric thin films; Fabrication; Nanocrystals; Nonvolatile memory; Size control; Thickness control; Flash memory; MLC; Metal nanocrystal; component; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173268
  • Filename
    5173268