Title :
Sub-Half-Micron GaAs FETS for Applications Through K Band
Author :
Huang, C. ; Herbig, A. ; Anderson, R.
Abstract :
Sub-half -micron gate GaAs FETs fabricated on high quality VPE buffer material have achieved state-of-the-art low noise perforances. Best noise figures of 0.58 dB at 4 GHz and 1.29 dB at 12 GHz have been observed. Power added efficiency of 35% at Ku band is also reported.
Keywords :
Doping profiles; FETs; Frequency; Gain; Gallium arsenide; Gold; Loss measurement; Noise figure; Noise measurement; Optical refraction;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129808
