• DocumentCode
    2670525
  • Title

    Sub-Half-Micron GaAs FETS for Applications Through K Band

  • Author

    Huang, C. ; Herbig, A. ; Anderson, R.

  • fYear
    1981
  • fDate
    15-19 June 1981
  • Firstpage
    25
  • Lastpage
    27
  • Abstract
    Sub-half -micron gate GaAs FETs fabricated on high quality VPE buffer material have achieved state-of-the-art low noise perforances. Best noise figures of 0.58 dB at 4 GHz and 1.29 dB at 12 GHz have been observed. Power added efficiency of 35% at Ku band is also reported.
  • Keywords
    Doping profiles; FETs; Frequency; Gain; Gallium arsenide; Gold; Loss measurement; Noise figure; Noise measurement; Optical refraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1981 IEEE MTT-S International
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1981.1129808
  • Filename
    1129808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2670525