DocumentCode
2670567
Title
Plated Source Bridge (PSB) GaAs Power FET with Improved Reliability
Author
Suzuki, T. ; Kobiki, M. ; Wataze, M. ; Segawa, K. ; Irie, M.
fYear
1981
fDate
15-19 June 1981
Firstpage
34
Lastpage
36
Abstract
Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.
Keywords
Bridge circuits; Electric resistance; Electrodes; FETs; Flip chip; Gallium arsenide; Gold; Production; Resists; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129811
Filename
1129811
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