Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacks

Author

Chen, Jun ; Sekiguchi, Takashi ; Fukata, Naoki ; Takase, Masami ; Chikyow, Toyohiro ; Hasunuma, Ryu ; Yamabe, Kikuo ; Sato, Motoyuki ; Nara, Yasuo ; Yamada, Keisaku

Author_Institution

Adv. Electron. Mater. Center, Nat. Inst. for Mater. Sci. (NIMS), Tsukuba, Japan

fYear

2009

fDate

26-30 April 2009

Firstpage

333

Lastpage

338

Abstract

We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed, comparing different gate electrodes and their temperature-dependence.

Keywords

EBIC; MOSFET; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; EBIC; MOSCAPs; MOSFETs; dielectric breakdown; electrical stress induced defects; electron beam induced current; high-k-metal gate stack; Dielectric breakdown; Electric breakdown; Electron beams; High K dielectric materials; High-K gate dielectrics; MOSFETs; Materials science and technology; Physics; Stress; Tin; CVS; EBIC; High-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173274

Filename

5173274