Title :
Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics
Author :
Hirano, Izumi ; Nakasaki, Yasushi ; Fukatsu, Shigeto ; Masada, Akiko ; Mitani, Yuichiro ; Goto, Masakazu ; Nagatomo, Koji ; Inumiya, Seiji ; Sekine, Katsuyuki
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The slope parameter of Weibull plot of Tbd, beta, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore beta of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to beta in terms of the origin of large beta for metal-gate/high-k.
Keywords :
Weibull distribution; field effect transistors; hafnium compounds; silicon compounds; HfSiON; Weibull distribution; bipolar stress; gate dielectrics; metal gate electrode; n-FETs; Dielectric breakdown; Dielectric materials; Dielectric measurements; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Stress measurement; Voltage; Weibull distribution; HfSiON; Metal-gate; TDDB; component; high-k;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173278
