Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs

Author

Fukatsu, Shigeto ; Hirano, Izumi ; Tatsumura, Kosuke ; Masada, Akiko ; Fujii, Shosuke ; Mitani, Yuichiro ; Goto, Masakazu ; Inumiya, Seiji ; Nakajima, Kazuaki ; Kawanaka, Shigeru ; Aoyama, Tomonori

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2009

fDate

26-30 April 2009

Firstpage

367

Lastpage

372

Abstract

We investigated bias temperature instability (BTI) and time dependent dielectric breakdown (TDDB) in TaCx/HfSiON MOSFETs in terms of the effects of TaCx metal gate electrode, using various Ta composition and TaCx thickness. We find a dual nature of TaCx metal gate electrode effects on the reliability. The gate electrode has both positive and negative influence on BTI and TDDB. Though various TaCx layers were deposited on the same HfSiON layer, high composition of Ta in the TaCx layer and thick TaCx layer improve BTI and mobility, while they deteriorate time to breakdown (Tbd) because of the effects of metal gate induced defects.

Keywords

MOSFET; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; tantalum compounds; MISFET; MOSFET; TaC-HfSiON; bias temperature instability; metal gate electrode; time dependent dielectric breakdown; Degradation; Dielectric breakdown; Electric breakdown; Electrodes; Large scale integration; MISFETs; MOSFET circuits; Temperature dependence; Threshold voltage; Tin; BTI; TDDB; component; high-k gate dielectrics; metal gate electrode;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173280

Filename

5173280