Title :
Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor
Author :
Yeoh, Yun Young ; Suk, Sung Dae ; Li, Ming ; Yeo, Kyoung Hwan ; Kim, Dong-Won ; Jin, Gyoyoung ; Oh, Kyoungsuk
Author_Institution :
Adv. Technol. Dev. Team 1, R&D Center, Samsung Electron. Co., Yongin, South Korea
Abstract :
Hot carrier (HC) reliability of gate-all-around twin Si nanowire field effect transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2 nm thickness show worse hot carrier reliability. The worst VD for 10 years guaranty, 1.31 V, satisfies requirement of ITRS roadmap.
Keywords :
MOSFET; elemental semiconductors; hot carriers; nanoelectronics; nanowires; semiconductor device reliability; silicon; technological forecasting; ITRS roadmap; Si; gate dielectrics; gate-all-around twin FET; hot carrier reliability; nanowire channel; nanowire field effect transistor; size 2 nm; voltage 1.31 V; Degradation; Dielectrics; Etching; FETs; Germanium silicon alloys; Hot carriers; Shape; Silicon germanium; Stress; Tin; GAA TSNWFET; GNOx; ISSG; RTO; gate length; hot carrier; nanowire channel size; oxide thickness;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173286
