• DocumentCode
    2670805
  • Title

    Reliability challenges for power devices under active cycling

  • Author

    Kanert, Werner

  • Author_Institution
    Infineon Technol., Neubiberg, Germany
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    409
  • Lastpage
    415
  • Abstract
    Power stages are subject to severe stress due to active cycling, resulting in e.g. fast thermal cycling. While some applications require several hundred millions of cycles under normal operation conditions, ldquodisturbancesrdquo such as short circuit pose additional challenges. These issues are neither addressed by ldquoclassicalrdquo silicon wafer technology qualification nor by standard product qualification procedures. Challenges and limitations in applying the principles of Robustness Validation to these issues are discussed.
  • Keywords
    power MOSFET; semiconductor device reliability; silicon; DMOS; Si; classical silicon wafer technology; double-diffused MOS transistor; normal operation condition; power device active cycling; power device reliability; robustness validation; standard product qualification procedure; Automotive applications; CMOS technology; Circuits; Isolation technology; Qualifications; Robustness; Silicon; Temperature; Thermal stresses; Voltage; Reliability; active cycling; power devices; qualification;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173288
  • Filename
    5173288