DocumentCode :
2670805
Title :
Reliability challenges for power devices under active cycling
Author :
Kanert, Werner
Author_Institution :
Infineon Technol., Neubiberg, Germany
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
409
Lastpage :
415
Abstract :
Power stages are subject to severe stress due to active cycling, resulting in e.g. fast thermal cycling. While some applications require several hundred millions of cycles under normal operation conditions, ldquodisturbancesrdquo such as short circuit pose additional challenges. These issues are neither addressed by ldquoclassicalrdquo silicon wafer technology qualification nor by standard product qualification procedures. Challenges and limitations in applying the principles of Robustness Validation to these issues are discussed.
Keywords :
power MOSFET; semiconductor device reliability; silicon; DMOS; Si; classical silicon wafer technology; double-diffused MOS transistor; normal operation condition; power device active cycling; power device reliability; robustness validation; standard product qualification procedure; Automotive applications; CMOS technology; Circuits; Isolation technology; Qualifications; Robustness; Silicon; Temperature; Thermal stresses; Voltage; Reliability; active cycling; power devices; qualification;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173288
Filename :
5173288
Link To Document :
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