• DocumentCode
    2670934
  • Title

    Void nucleation and growth contributions to the critical current density for failure of Cu vias

  • Author

    Oates, A.S. ; Lin, M.H.

  • Author_Institution
    Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    452
  • Lastpage
    456
  • Abstract
    We investigate the critical current density for electromigration failure, jc, as a function of voiding failure mode for Cu dual damascene vias. We demonstrate experimentally the variation of (jL) product with via failure mode showing that it is not possible to characterize vias by a single (jL). We suggest that, in general, jc for failure is determined by the sum of void nucleation and growth components, and we present a model for jc based on these concepts.
  • Keywords
    copper; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; nucleation; voids (solid); Cu; circuit reliability; copper interconnects; critical current density; dual damascene vias; electromigration failure; void nucleation; voiding failure mode; Anodes; Cathodes; Compressive stress; Conductors; Critical current density; Current density; Electromigration; Integrated circuit interconnections; Steady-state; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173296
  • Filename
    5173296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2670934