مرکز منطقه ای اطلاع رساني علوم و فناوري - 1997 GaAs Reliability Workshop. Proceedings

DocumentCode :

2671010

Title :

1997 GaAs Reliability Workshop. Proceedings

fYear :

1997

fDate :

12-12 Oct. 1997

Abstract :

The following topics were dealt with: HBT reliability; lifetesting; hydrogen effects; gate lag

Keywords :

III-V semiconductors; gallium arsenide; reliability; GaAs; HBT; gallium arsenide; gate lag; hydrogen effects; lifetesting; reliability;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

GaAs Reliability Workshop, 1997., Proceedings

Conference_Location :

Anaheim, CA, USA

Print_ISBN :

0-7908-0064-0

Type :

conf

DOI :

10.1109/GAASRW.1997.656109

Filename :

656109

Link To Document :