Photoconductive THz generation at 1.5 μm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

Author

Dietz, R.J.B. ; Gerhard, M. ; Boettcher, J. ; Kuenzel, H. ; Koch, M. ; Sartorius, B. ; Schell, M.

Author_Institution

Heinrich-Hertz-Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical multilayers; photoconducting switches; photoconductivity; terahertz wave generation; InGaAs-InAlAs; MBE; carrier mobility; multinanolayer structures; optical power-to-THz conversion efficiency; photoconductive THz generation; photoconductive layers; photoconductive switches; trapping layers; wavelength 1.5 mum; Absorption; Charge carrier processes; Indium gallium arsenide; Optical pulses; Optical receivers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6104831

Filename

6104831