Title :
TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates
Author :
Kerber, A. ; Cartier, E. ; Linder, B.P. ; Krishnan, S.A. ; Nigam, T.
Author_Institution :
Adv. Micro Devices, Yorktown Heights, NY, USA
Abstract :
Extensive breakdown measurements with large statistic confirm that the TDDB failure distribution follows Poisson area scaling. However, towards larger areas and lower failure percentiles the distribution changes in ways similar to those reported for progressive breakdown in poly Si/SiON gate stacks. The change in failure distribution is found to be more pronounced for nFET than for pFET devices. In addition AC TDDB testing was explored, confirming the shape of the DC failure distributions but shows a significant reduction in TDDB lifetime for nFET devices.
Keywords :
CMOS integrated circuits; MOSFET; failure analysis; high-k dielectric thin films; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; silicon-on-insulator; DC failure distribution; Poisson area scaling; SOI substrate; Si-SiON; TDDB failure distribution; extensive breakdown measurement; metal gate-high-k CMOS device; nFET device; High K dielectric materials; High-K gate dielectrics; SILC; TDDB; high-k dielectrics; metal gate; oxygen vacancies;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173304