Title :
Wideband Cavity Tuned GaAs FET Oscillator
Author :
Joly, R. ; Heinz, W.W. ; Cristal, E.G.
Abstract :
The design and performance of a cavity tuned GaAs FET oscillator operating from 5.35 to 12.75 GHz with FM capability is described. Experimental data of power, FM frequency response, FM linearity, and SSB phase noise are presented.
Keywords :
Bandwidth; Circuit noise; Circuit optimization; FETs; Frequency modulation; Gallium arsenide; Microwave oscillators; RLC circuits; Resonance; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129847