Title :
Balanced Dual Gate GaAs FET Frequency Doublers
Abstract :
A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.
Keywords :
Circuits; Double-gate FETs; Frequency; Gallium arsenide; Impedance matching; MESFETs; Microwave theory and techniques; Power generation; Stability; Wire;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129849
