Title :
Probing charge carriers in semiconductor quantum dots by terahertz spectroscopy
Author :
Wang, F. ; Bonn, M. ; Shan, J. ; Islam, M.A. ; Herman, I.P. ; Heinz, T.F.
Author_Institution :
Dept. of Phys. & Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
The terahertz response of photo-excited charge carriers in CdSe quantum dots has been studied. Quantum dots containing a single electron-hole pair exhibit a real polarizability with a magnitude exceeding 10000 /spl Aring//sup 3/.
Keywords :
carrier mobility; high-speed optical techniques; infrared spectra; photoconductivity; photoexcitation; semiconductor quantum dots; submillimetre wave spectra; CdSe; CdSe quantum dots; charge carriers; electron-hole pair; photo-excited charge carriers; polarizability; semiconductor quantum dots; terahertz spectroscopy; Charge carriers; Conductivity; Frequency; Optical polarization; Optical pumping; Pulse amplifiers; Quantum dots; Spectroscopy; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.237916
