Title :
Optical orientation of spin polarized holes in bulk GaAs
Author :
Hilton, D.J. ; Tang, C.L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Optical orientation of spin-polarized heavy and light holes followed by relaxation to other valence subband states has been observed unambiguously in undoped bulk GaAs. The spin relaxation time for the heavy holes is 110 fs /spl plusmn/ 10%.
Keywords :
III-V semiconductors; gallium arsenide; spin polarised transport; spin-lattice relaxation; time resolved spectra; valence bands; 110 fs; GaAs; bulk GaAs; optical orientation; spin polarized holes; spin relaxation time; valence subband states; Absorption; Gallium arsenide; Laser mode locking; Optical polarization; Optical pulse generation; Optical pulses; Probes; Space vector pulse width modulation; Ultrafast optics; Ultraviolet sources;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.237946
