• DocumentCode
    2671206
  • Title

    Optical orientation of spin polarized holes in bulk GaAs

  • Author

    Hilton, D.J. ; Tang, C.L.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2003
  • fDate
    6-6 June 2003
  • Abstract
    Optical orientation of spin-polarized heavy and light holes followed by relaxation to other valence subband states has been observed unambiguously in undoped bulk GaAs. The spin relaxation time for the heavy holes is 110 fs /spl plusmn/ 10%.
  • Keywords
    III-V semiconductors; gallium arsenide; spin polarised transport; spin-lattice relaxation; time resolved spectra; valence bands; 110 fs; GaAs; bulk GaAs; optical orientation; spin polarized holes; spin relaxation time; valence subband states; Absorption; Gallium arsenide; Laser mode locking; Optical polarization; Optical pulse generation; Optical pulses; Probes; Space vector pulse width modulation; Ultrafast optics; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-749-0
  • Type

    conf

  • DOI
    10.1109/QELS.2003.237946
  • Filename
    1276353
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2671206