Accurate product lifetime predictions based on device-level measurements

Author

Nigam, T. ; Parameshwaran, B. ; Krause, G.

Author_Institution

Adv. Micro Devices, Sunnyvale, CA, USA

fYear

2009

fDate

26-30 April 2009

Firstpage

634

Lastpage

639

Abstract

Product level lifetime margins, determined by HCI and BTI, are shrinking with scaling. We developed highly accurate device-level HCI degradation models that, together with known BTI models, are able to accurately predict frequency degradation of a ring oscillator. We show that despite substantial relief from HCI damage in balanced switching circuits, HCI degradation still accounts for 40-50% of frequency degradation for a 10-year product life.

Keywords

MOSFET; hot carriers; oscillators; semiconductor device reliability; silicon compounds; silicon-on-insulator; switching circuits; SiON; balanced switching circuits; bias temperature instability; device-level degradation models; floating body SOI devices; frequency degradation; hot carrier injection; product lifetime predictions; ring oscillator; universal saturation model; Degradation; Frequency; Human computer interaction; Niobium compounds; Predictive models; Ring oscillators; Stress; Switching circuits; Titanium compounds; Voltage; HCI; product degradation; ring oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173322

Filename

5173322