DocumentCode
2671402
Title
Characterising Zinc Telluride wafers using continuous-wave terahertz spectroscopy
Author
Constable, E. ; Lewis, R.A.
Author_Institution
Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
Using a two-colour, continuous-wave terahertz (THz) source, we present a non-contact, non-destructive method for characterising the crystal parameters of Zinc Telluride (ZnTe) wafers. The high and low frequency dielectric constants and plasma and phonon frequencies of ZnTe wafers of differing thickness are found by fitting a simple model to the transmittance as a function of frequency. The dielectric function used in the fitting function invokes phonon, plasma and atomic contributions, which have not been considered simultaneously in previous work. The continuous-wave THz source allows for higher resolution at lower frequencies than is achievable with conventional pulsed-wave techniques.
Keywords
II-VI semiconductors; dielectric function; high-frequency effects; nondestructive testing; permittivity; phonons; terahertz spectroscopy; zinc compounds; ZnTe; atomic contribution; conventional pulsed-wave technique; crystal parameter; dielectric constant; fitting function; frequency function; noncontact nondestructive method; phonon frequency; plasma contribution; plasma frequency; two-colour continuous-wave terahertz source; zinc telluride wafer; Atomic clocks; Dielectrics; Ions; Materials; Phonons; Plasmas; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104849
Filename
6104849
Link To Document