• DocumentCode
    2671482
  • Title

    A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions

  • Author

    Shrivastava, Mayank ; Schneider, Jens ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    669
  • Lastpage
    675
  • Abstract
    We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (~2X) in failure threshold (IT2).
  • Keywords
    MOSFET; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; 3D device modeling; DeNMOS devices; ESD; electrostatic discharge; failure threshold; filamentation phase; power dissipation; reliability; space charge; thermal runaway; CMOS process; CMOS technology; Circuit simulation; Electrostatic discharge; MOS devices; Power dissipation; Protection; Space charge; Space technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173327
  • Filename
    5173327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2671482