Title :
A new detection method of soft breakdown in ultra-thin gate oxides by light-emission analysis
Author :
Ohgata, K. ; Ogasawara, M. ; Kawakami, M. ; Koyama, T. ; Murakami, E.
Author_Institution :
Process & Device Anal. Eng. Dev. Dept., Renesas Technol. Corp., Hitachinaka, China
Abstract :
We clarified that the SBD in ultra-thin oxides with the large direct tunneling current in which masks the SBD event can be detected by using the adequate threshold of the intensity in light-emission analysis. This new method is a WLR tool for monitoring oxides integrity instead of V-RAMP test.
Keywords :
field effect transistors; semiconductor device breakdown; semiconductor device reliability; SBD; light-emission analysis; soft breakdown; tunneling current; ultra-thin gate oxide; Electric breakdown; Event detection; Failure analysis; Indium gallium arsenide; Leakage current; Lenses; Microscopy; Random access memory; Testing; Tunneling; V-RAMP; ligth-emission; oxide; soft breakdown;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173333
