DocumentCode
2671616
Title
Carrier dynamics in ultrathin films of semimetal Bismuth studied with terahertz time-domain spectroscopy
Author
Yokota, K. ; Takeda, J. ; Han, G. ; McCarthy, D. ; Nagao, T. ; Kitajima, M. ; Katayama, I.
Author_Institution
Dept. of Phys., Yokohama Nat. Univ., Yokohama, Japan
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
The thickness dependence of the terahertz absorption in Bi(001) ultrathin films has been investigated. Both the average carrier density and the damping constant of the plasmon increase as the thickness becomes thinner. The results are consistent with the existence of the surface metallic states.
Keywords
bismuth; carrier density; semimetallic thin films; surface plasmons; terahertz spectroscopy; Bi; average carrier density; carrier dynamics; plasmon damping constant; semimetal bismuth; surface metallic states; terahertz absorption; terahertz time-domain spectroscopy; thickness dependence; ultrathin films; Bismuth; Charge carrier density; Damping; Dielectric constant; Films; Plasmas; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104858
Filename
6104858
Link To Document