Title :
Strain induced buffer layer defects in GaN HFETs and their evolution during reliability testing
Author :
Li, Yinsin ; Krishnan, M. ; Salemi, S. ; Paradee, G. ; Christou, A.
Author_Institution :
Mater. Sci. & Eng. Dept., Univ. of Maryland, College Park, MD, USA
Abstract :
The reliability physics of GaN HFETs has been investigated in order to identify strain related traps originating at the GaN/SiC substrate interface. The buffer layers investigated were deposited by MBE techniques at a series of growth temperatures and thicknesses so as to attain buffer layers with variable trap density. Heterojunction transistors (HFETs) based on AlGaN/GaN heterostructures have been modeled and the results are described in this paper.
Keywords :
III-V semiconductors; aluminium compounds; crystal defects; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; semiconductor device reliability; semiconductor device testing; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; GaN-SiC; HFET; MBE techniques; heterojunction transistors; reliability testing; semiconductor heterostructures; strain induced buffer layer defects; trap density; Buffer layers; Capacitive sensors; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Physics; Silicon carbide; Temperature; Testing; Nitrides; compound semiconductors; heterojunction degradation; trapping mechanisms;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173336
