DocumentCode
2671668
Title
Temperature-dependent conductivity of Mg-doped amorphous silicon film using terahertz time-domain spectroscopy
Author
Tapia, A.K.G. ; Uchino, T. ; Tominaga, K.
Author_Institution
Grad. Sch. of Sci., Kobe Univ., Kobe, Japan
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
The temperature-dependent conductivity of Mg-doped amorphous silicon film on sapphire substrate was studied by terahertz (THz) time-domain spectroscopy. The complex conductivity showed characteristics of charge localizations. The complex conductivity was fitted by the Drude-Smith model. The relaxation time increased at higher temperatures implying that mobility also increased. Lastly, plasma frequency, proportional to carrier concentration, appeared to be constant with temperature.
Keywords
magnesium; silicon; terahertz spectroscopy; Drude-Smith model; Si:Mg; amorphous silicon film; plasma frequency; sapphire substrate; temperature-dependent conductivity; terahertz time-domain spectroscopy; Conductivity; Films; Mathematical model; Plasma temperature; Spectroscopy; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104860
Filename
6104860
Link To Document