Title :
High Efficiency Mode Characterization in a 20 GHz MBE GaAs IMPATT Diode Amplifier
Author :
Kondoh, H. ; Berenz, J. ; Hierl, T. ; Dalman, G.C. ; Lee, C.A.
Abstract :
A high efficiency mode in a 20 GHz MBE-grown single drift GaAs Read-type IMPATT diode has been observed by using a computer-aided characterization system. The intrinsic diode is estimated to have 2 W power capability with 26% efficiency at 22 GHz. The diode was tested in a modified top-hat amplifier circuit to demonstrate 3.1 GHz bandwidth at 3.7 dB gain with 3 W maximum output power.
Keywords :
Admittance measurement; Broadband amplifiers; Circuit testing; Diodes; Electrical resistance measurement; Frequency; Gain; Gallium arsenide; Power engineering computing; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129881
