DocumentCode
2671754
Title
V-Band GaAs Gunn Diode
Author
Chen Xiaojian ; Deng Yanmao ; Huang Zhenqi
fYear
1981
fDate
15-19 June 1981
Firstpage
245
Lastpage
245
Abstract
The contradictions between the thermal parameters and microwave parasitic parameters in mm-wave Gunn diodes can be released by reasonable assumption for the thermal-conducting model of devices and practical analysis of microwave parasitic parameters. The corresponding formulas and curves are derived to carefully design the configuration parameters of the V-band device and its package.
Keywords
Chemical technology; Circuit stability; Electromagnetic heating; Frequency; Gallium arsenide; Gunn devices; Light emitting diodes; Microwave devices; Microwave oscillators; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129884
Filename
1129884
Link To Document