DocumentCode
2671777
Title
Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection
Author
Shrivastava, Mayank ; Schneider, Jens ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay Mumbai, Mumbai, India
fYear
2009
fDate
26-30 April 2009
Firstpage
754
Lastpage
759
Abstract
A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.
Keywords
MOSFET; electrostatic discharge; semiconductor device breakdown; semiconductor device reliability; 3D simulations; DeMOS device optimization; NMOS configuration; gate oxide breakdown; high failure threshold; highly resistive body STI NDeMOS; moving current filaments; robust ESD protection; Breakdown voltage; Electric breakdown; Electrostatic discharge; Integrated circuit technology; MOS devices; Physics; Protection; Robustness; Stress; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173344
Filename
5173344
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