Title :
Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection
Author :
Shrivastava, Mayank ; Schneider, Jens ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay Mumbai, Mumbai, India
Abstract :
A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.
Keywords :
MOSFET; electrostatic discharge; semiconductor device breakdown; semiconductor device reliability; 3D simulations; DeMOS device optimization; NMOS configuration; gate oxide breakdown; high failure threshold; highly resistive body STI NDeMOS; moving current filaments; robust ESD protection; Breakdown voltage; Electric breakdown; Electrostatic discharge; Integrated circuit technology; MOS devices; Physics; Protection; Robustness; Stress; Switches;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173344
