Title :
Analysis on forward-biased electrostatic-discharge-induced degradation of InP-based buried heterostructure laser diodes
Author :
Ichikawa, Hiroyuki ; Matsukawa, Shinji ; Hamada, Kotaro ; Yamaguchi, Akira ; Nakabayashi, Takashi
Author_Institution :
Transm. Devices R & D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan
Abstract :
We clarified the mechanism of forward-biased electrostatic-discharge-induced degradation of InP-based laser diodes. This degradation was caused by melting of the active layer as a result of light absorption. We observed a reduction in tolerance on aging in uncoated laser diodes. This reduction was suppressed by facet coating.
Keywords :
III-V semiconductors; buried layers; electrostatic discharge; indium compounds; integrated optoelectronics; laser reliability; semiconductor lasers; InP; LD reliability; buried heterostructure laser diode; facet coating; forward-biased electrostatic-discharge-induced degradation; light absorption; Aging; Coatings; Degradation; Diode lasers; Electrostatic analysis; Electrostatic discharge; Laboratories; Protection; Testing; Voltage; BH; ESD; InP; LD; aging; degradation; facet coating; reliability;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173346
