Title :
Spin relaxation in [110] and [001] InAs/GaSb superlattices
Author :
Gundogdu, K. ; Hall, K.C. ; Lau, W.H. ; Flatte, M.E. ; Boggess, T.F. ; Zinck, J.J. ; Barvosa-Carter, B. ; Skeith, S.L.
Author_Institution :
Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA
Abstract :
A 25 times enhancement of the electron spin lifetime is observed in a [110] InAs/GaSb superlattice relative to the corresponding [001] superlattice, an effect that is primarily attributed to suppression of native interface asymmetry.
Keywords :
III-V semiconductors; electron relaxation time; gallium compounds; high-speed optical techniques; indium compounds; interface states; semiconductor superlattices; InAs-GaSb; InAs/GaSb superlattices; electron spin lifetime; native interface asymmetry; spin relaxation; Cities and towns; Delay; Electron optics; Extraterrestrial measurements; High speed optical techniques; Laboratories; Magnetoelectronics; Polarization; Semiconductor superlattices; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238058
