• DocumentCode
    2671870
  • Title

    The Development of High-Power, Low-Frequency PIN Diodes

  • Author

    Caulton, M. ; Rosen, A. ; Stabile, P. ; Gombar, A.

  • fYear
    1981
  • fDate
    15-19 June 1981
  • Firstpage
    255
  • Lastpage
    257
  • Abstract
    The application of PIN diodes in high-power systems at frequencies as low as 500 kHz requires the use of diodes with intrinsic layers of long carrier lifetimes, operation at low rf-to-bias current ratios, and large reverse bias voltages. The development of suitable diodes, operating conditions, and test results in actual circuits are described.
  • Keywords
    Antenna measurements; Charge carrier lifetime; Circuit testing; Conductivity; Diodes; Frequency; Microwave technology; Resistors; Switches; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1981 IEEE MTT-S International
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1981.1129889
  • Filename
    1129889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2671870