DocumentCode
2671896
Title
A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFETS
Author
Dormer, L. ; James, D.S.
fYear
1981
fDate
15-19 June 1981
Firstpage
258
Lastpage
260
Abstract
Low-noise GaAs MESFET´S have been investigated for catastrophic burn-out ratings when exposed to representative pulses from an X-band transmitter/T-R cell combination. Also reported are failure analyses, non-catastrophic but recoverable effects and longer term tests.
Keywords
Circuit testing; Failure analysis; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Pulse amplifiers; Radar; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129890
Filename
1129890
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