DocumentCode :
2671985
Title :
High frequency transport in bi-layer graphene FET devices
Author :
Mahjoub, M. ; Aoki, N. ; Song, J. ; Bird, J.P. ; Ferry, D.K. ; Kawano, Y. ; Ishibashi, K. ; Ochiai, Y.
Author_Institution :
GS-AIS, Chiba Univ., Chiba, Japan
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
In order to study on THz radiation pick upping by use of graphene nano-structures, we explore the use of quantum dot as nano scale GHz-THz detector with a high sensitive and/or a wide range frequency response. A fundamental possibility in the device application has been studied.
Keywords :
graphene; microwave field effect transistors; quantum dots; terahertz wave detectors; C; THz radiation; bilayer graphene FET devices; frequency response; graphene nanostructures; high frequency transport; nanoscale GHz-THz detector; quantum dot; Electromagnetic heating; Frequency measurement; Microwave FETs; Microwave measurements; Performance evaluation; Radiation effects; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6104877
Filename :
6104877
Link To Document :
بازگشت