• DocumentCode
    2672054
  • Title

    The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

  • Author

    Jung, Sung-Yup ; Kim, Byoung-Joon ; Lee, Nam Yeal ; Kim, Baek-Mann ; Yeom, Seung Jin ; Kwak, Noh Jung ; Joo, Young-Chang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    825
  • Lastpage
    827
  • Abstract
    Cu ion migration mechanism was investigated in damascene Cu/SiO2 interconnects. Cu backward migration was investigated by AC TDDB test. When AC is applied, the Cu migration cannot be recovered completely because the direction of diffusion flux and drift flux is opposite. Therefore, lifetime of AC TDDB is slightly larger than that of DC TDDB.
  • Keywords
    copper; electric breakdown; integrated circuit interconnections; silicon compounds; stress analysis; AC TDDB test; Cu-SiO2; diffusion flux; drift flux; drift induced dielectric breakdown; ion migration mechanism; polarity bias temperature stress; time dependent dielectric breakdown; Copper; Dielectric breakdown; Electrodes; Leakage current; Metal-insulator structures; Performance evaluation; Stress; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173359
  • Filename
    5173359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2672054