Title :
Delay-time dependent adatom desorption from the Si(111)-7/spl times/7 surface using femtosecond optical pulse pair excitation
Author :
Futaba, Don N. ; Tomiyama, S. ; Suguro, A. ; Shigekawa, H. ; Morita, R. ; Yamashita, M.
Author_Institution :
Dept. of Appl. Phys., Hokkaido Univ., Sapporo, Japan
Abstract :
Using femtosecond pulse-pair excitation at 800-nm, delay-time dependent adatom desorption from the Si(111)-7/spl times/7 surface was observed by scanning tunneling microscopy. Trends in the desorption yield and site selectivity were detected as a function of delay time.
Keywords :
delays; desorption; elemental semiconductors; high-speed optical techniques; scanning tunnelling microscopy; silicon; 800 nm; Si; adatom desorption; delay-time; femtosecond pulse-pair excitation; scanning tunneling microscopy; Delay effects; Frequency; Optical microscopy; Optical pulses; Optical surface waves; Physics; Surface reconstruction; Surface topography; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238164
