DocumentCode :
2672084
Title :
A current testing for CMOS static RAMs to reduce testing costs
Author :
Yokoyama, Hiroshi ; Tamamoto, Hideo ; Narita, Yuichi
Author_Institution :
Dept. of Inf. Eng., Akita Univ., Japan
fYear :
1993
fDate :
16-18 Nov 1993
Firstpage :
231
Lastpage :
236
Abstract :
This paper presents a methodology to reduce the testing costs of a CMOS static RAMs (SRAMs), based on a current testing. In this test method, the structure of SRAMs is modified so that all the cells can be driven simultaneously. A fault in the memory cell array can be detected by only observing the abnormal current. Since the whole cell array could be treated as if it were a single cell, the length of the test sequences is not dependent on the size of the memory cell array and must be very short
Keywords :
CMOS memory circuits; SPICE; SRAM chips; economics; electric current measurement; fault location; integrated circuit manufacture; integrated circuit testing; logic arrays; logic testing; CMOS; IDDQ testing; PSPICE; SPICE3; SRAMs; current testing; fault detection; fault mapping; memory cell array; static RAMs; stuck-on faults; stuck-open faults; testing costs; Circuit faults; Circuit testing; Costs; Electrical fault detection; Fault detection; Logic testing; Random access memory; Read-write memory; Semiconductor device modeling; Variable structure systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium, 1993., Proceedings of the Second Asian
Conference_Location :
Beijing
Print_ISBN :
0-8186-3930-X
Type :
conf
DOI :
10.1109/ATS.1993.398810
Filename :
398810
Link To Document :
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