DocumentCode
2672088
Title
Process options for improving electromigration performance in 32nm technology and beyond
Author
Aubel, O. ; Hohage, J. ; Feustel, F. ; Hennesthal, C. ; Mayer, U. ; Preusse, A. ; Nopper, M. ; Lehr, M.U. ; Boemmels, J. ; Wehner, S.
Author_Institution
Quality & Reliability, AMD Fab36 LLC & Co. KG, Dresden, Germany
fYear
2009
fDate
26-30 April 2009
Firstpage
832
Lastpage
836
Abstract
In this paper we present process options to close the gap between electromigration performance needs by design and process performance. We are going to present reliability data for metal capping and advanced copper surface cleaning processes. These processes are showing very good performance and extendibility to 32 nm technology nodes and beyond.
Keywords
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; surface cleaning; Cu; copper surface cleaning process; electromigration performance; metal capping; reliability data; size 32 nm; Alloying; Copper; Degradation; Dielectrics; Electric breakdown; Electromigration; Electrons; Reliability engineering; Surface cleaning; Surface resistance; ILD breakdown strength; electromigration; interface engineering; metal capping;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173361
Filename
5173361
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