Title :
Joule heating effects on electromigration in Cu/low-κ interconnects
Author :
Yokogawa, S. ; Kakuhara, Y. ; Tsuchiya, H.
Author_Institution :
Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
Abstract :
We investigated Joule heating effects on EM in Cu/low-kappa interconnects. The 1-D radiation mainly contributes to Joule heating. The contribution of the 2-D radiation is larger in a smaller area. However, the passive lines in the same layer do not act as a radiation activator but rather as a compounding factor. EM lifetime degradation is remarkable for dense structure due to poor 2-D radiation. High frequency pulse stress reduces Joule heating, and EM lifetime is improved due to reduction of the Joule heating.
Keywords :
CMOS integrated circuits; copper; electromigration; integrated circuit interconnections; low-k dielectric thin films; 1D radiation; 2D radiation; CMOS circuit; Cu; EM lifetime degradation; Joule heating effect; copper-low-kappa interconnect; electromigration; high frequency pulse stress; low-K dielectric film; radiation activator; Current density; Degradation; Dielectrics; Electromigration; Heating; Integrated circuit interconnections; Pulse circuits; Stress; Temperature; Thermal conductivity; 1-D radiation; 2-D radiation; Cu/low-k; Joule heating; Pulse stress; electromigration;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173362
