DocumentCode
2672157
Title
The dynamic thermal behavior of silicided polysilicon under hight current stress event
Author
Lee, Jian-Hsing ; Shih, J.R. ; David-Su ; Wu, Kenneth
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2009
fDate
26-30 April 2009
Firstpage
861
Lastpage
864
Abstract
A simple dynamic thermal model considering Joule-heating, heat-conduction and energy conservation has been developed. It fits the dynamic thermal behavior of the silicided polysilicon under the high current stress event very well. The criterion to induce the DC resistance change of a silicided polysilicon resistor is determined by the phase transform temperature (PTT) of the silicide polysilicon.
Keywords
resistors; stress analysis; thermal analysis; DC resistance; Joule-heating; dynamic thermal behavior model; energy conservation; heat-conduction; high current stress event; phase transform temperature; silicided polysilicon resistor; CMOS technology; Current measurement; Energy conservation; Probes; Pulse measurements; Resistors; Silicides; Testing; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173367
Filename
5173367
Link To Document