Title :
Transport properties of free carriers in high quality n-type GaN wafers studied by THz time-domain magneto-optical ellipsometry
Author :
Yatsugi, Kenichi ; Matsumoto, Naoki ; Nagashima, Takeshi ; Hangyo, Masanori
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita, Japan
Abstract :
We have measured the dependence of effective mass and electron mobility of high quality n-type (0001) GaN wafers on carrier density in the range of 8×1015 ~ 8×1017 cm-3 by using THz time-domain magneto-optical ellipsometry. The carrier density dependence of mobility agrees well with the theoretical prediction for low dislocation density sample.
Keywords :
III-V semiconductors; carrier density; dislocation density; effective mass; electron mobility; ellipsometry; gallium compounds; magneto-optical effects; terahertz wave spectra; wide band gap semiconductors; GaN; THz time-domain magnetooptical ellipsometry; carrier density dependence; dislocation density; effective mass; electron mobility; free carriers; high-quality n-type gallium nitride wafers; transport properties; Charge carrier density; Effective mass; Gallium nitride; Magnetic fields; Scattering; Semiconductor device measurement; Time domain analysis;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104886
