Title :
Subpicosecond luminescence spectroscopy of hot carrier dynamics in homoepitaxial GaN
Author :
Garrett, G.A. ; Rudin, S. ; Sampath, A.V. ; Collins, C.J. ; Shen, H. ; Wraback, M.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Femtosecond UV luminescence downconversion is used to study hot carrier relaxation in homoepitaxial GaN through measurement of PL rise times for varying carrier excitation energies and densities.
Keywords :
II-VI semiconductors; carrier density; carrier relaxation time; gallium compounds; high-speed optical techniques; photoluminescence; semiconductor epitaxial layers; ultraviolet spectra; wide band gap semiconductors; GaN; carrier excitation densities; carrier excitation energies; femtosecond UV luminescence downconversion; homoepitaxial GaN; hot carrier dynamics; hot carrier relaxation; photoluminescence; subpicosecond luminescence spectroscopy; Gallium nitride; Hot carriers; Luminescence; Nonlinear optics; Optical mixing; Optical pulses; Optical pumping; Optical sensors; Spectroscopy; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238213
