Title :
Statistical retention modeling in floating-gate cell: ONO scaling
Author :
Serov, Andrey ; Shin, Dongwan ; Kim, Dae Sin ; Kim, Taikyung ; Lee, Keun-Ho ; Park, Young-Kwan ; Yoo, Moon-Hyun ; Kim, Taehun ; Sung, Sug-Kang ; Lee, Choong-Ho
Author_Institution :
CAE Team, Samsung Electron., Hwasung, South Korea
Abstract :
The simulation study of the ONO gate stack scaling, which includes the Monte-Carlo statistical analysis of time-dependent Vth distribution and SILC is performed. Leakage through both tunneling and blocking oxide is taken into account including multi-trap tunneling paths. Exact 50 nm floating-gate cell structure is used instead of simple 1D stack for modeling and comparison with experimental data. Analysis of the influence of trap parameters on scaling trends is given.
Keywords :
Monte Carlo methods; flash memories; leakage currents; statistical analysis; tunnelling; Monte-Carlo statistical analysis; ONO gate stack scaling; SILC; flash memories; floating-gate cell structure; leakage current; multitrap tunneling paths; nonvolatile memory cell scaling; size 50 nm; statistical retention modeling; time-dependent Vth distribution; Analytical models; Computer aided engineering; Dielectrics; Electron traps; Leakage current; Nonvolatile memory; Silicon compounds; Statistical analysis; Tail; Tunneling; Flash memories; dielectrics; retention modeling;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173372
