Title :
Post-cycling data retention failure in multilevel nor flash memory with nitrided tunnel-oxide
Author :
Lee, Wook H. ; Hur, Chang-Hyun ; Lee, Hyun-Min ; Yoo, Hwanbae ; Lee, Sang-Eun ; Lee, Bong-Yong ; Park, Chankwang ; Kim, KiJoon
Author_Institution :
Memory Div., Samsung Electron., Yongin, South Korea
Abstract :
Post-cycling data retention characteristics of a multilevel NOR flash memory with nitrided tunnel-oxide is presented. Results show that retention behavior is strongly related to the amount of interface trap generation rather than that of oxide trap, indicating detrapping from near interface trap is a major factor for threshold voltage shift. Process conditions including nitrogen concentration at the interface and subsequent annealing of nitrided tunnel-oxide by O2 are found to be related to the generation of interface trap and resultant postcycling retention.
Keywords :
NOR circuits; flash memories; annealing; interface trap generation; multilevel NOR flash memory; nitrided tunnel-oxide; nitrogen concentration; postcycling data retention failure; process conditions; threshold voltage shift; Annealing; Character generation; Distortion measurement; Electron traps; Flash memory; Interference; Nitrogen; Threshold voltage; Transconductance; Voltage control; Endurance; Interface Trap; MLC; NOR flash; Retention;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173377
