Title :
Dielectric measurements and characterization of impurities of photovoltaic cell materials at millimeter and THz waves
Author :
Afsar, Mohammed N. ; Chao, Liu ; Korolev, Konstantin A.
Author_Institution :
Electr. & Comput. Eng. Dept., Tufts Univ., Medford, MA, USA
Abstract :
Transmittance, Refractive Index, Absorption coefficient, Real and Imaginary part of complex dielectric permittivity data for several Silicon, Silicon Carbide, Gallium Arsenide, Cadmium Telluride and Copper Indium Selenide specimens were measured using Dispersive Fourier Transform Spectroscopy and Free Space Quasi-optical Spectrometer powered by several Backward Wave Oscillators for the characterization of photovoltaic cell materials at Millimeter and THz Waves. Precision measurements easily identifies impurities present in these materials. Data for several silicon carbide (SiC) specimens and powdered Cadmium Telluride specimen over a broad millimeter wave range are shown.
Keywords :
absorption coefficients; cadmium compounds; copper compounds; dielectric measurement; gallium arsenide; millimetre wave measurement; permittivity; photovoltaic cells; refractive index; silicon compounds; terahertz materials; THz waves; absorption coefficient; backward wave oscillator; cadmium telluride; copper indium selenide; dielectric measurement; dielectric permittivity; dispersive Fourier transform spectroscopy; free space quasioptical spectrometer; gallium arsenide; impurity characterization; millimeter wave; photovoltaic cell material; refractive index; silicon carbide; transmittance; Dielectric measurements; Dielectrics; Materials; Millimeter wave measurements; Permittivity; Photovoltaic cells; Silicon carbide;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104890
