Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor

Author

Kim, Jae Chul ; Lee, Kyong Taek ; Song, Seung Hyun ; Park, Min Sang ; Hong, Seung Ho ; Choi, Gil Bok ; Choi, Hyun Sik ; Baek, Rock Hyun ; Sagong, Hyun Chul ; Jeong, Yoon-Ha ; Jung, Sung Woo ; Kang, Chang Young

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2009

fDate

26-30 April 2009

Firstpage

917

Lastpage

920

Abstract

We have investigated reliability characteristics for a high-k/metal gate MOSFET with strain engineering under constant voltage stress (CVS). Using contact edge stop layer (CESL), tensile and compressive strains are applied to the channel region. Since the compressive MOSFET has more hydrogen in the CESL, the MOSFET has lower reliability characteristics than others. Though the hydrogen can passivate dangling bonds in the high-k dielectric, the passivated bonds are easily broken by voltage stress, which cause degradation of high-k layer.

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; passivation; semiconductor device reliability; silicon compounds; stress analysis; HFO₂-SiO₂; channel region; compressive strains; contact edge stop layer; dangling bonds; high-k-metal gate MOSFET; hydrogen passivation; reliability characteristics; strain engineering; tensile strains; voltage stress; Capacitive sensors; Compressive stress; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; MOSFET circuits; Reliability engineering; Tensile stress; Voltage; Breakdown; CESL; HfO2; Reliability; SILC; Strain engineering; TDDB; TZDB; component;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173380

Filename

5173380