DocumentCode
2672355
Title
Millimeter-Wave Silicon IMPATT Sources and Combiners for the 110-260 GHz Range
Author
Kai Chang ; Thrower, F. ; Hayashibara, G.M.
fYear
1981
fDate
15-19 June 1981
Firstpage
344
Lastpage
346
Abstract
This paper reports the recent progress in CW and pulsed silicon IMPATT sources in the 110-260 GHz frequency range. A bridged double-quartz-standoff package has been developed and successfully used for the entire frequency range. Power combiners at center frequencies of 140 and 217 GHz have also been developed with peak output power of 9.2 and 1 W respectively.
Keywords
Circuits; Diodes; Doping profiles; Fabrication; Frequency; Gold; Impedance; Packaging; Power generation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129919
Filename
1129919
Link To Document